Abstract
This paper presents a fast and accurate method for identifying defects responsible for SRAM bitcell failures. The steps involved in the process include functional testing, current-voltage measurements, and defect classification based on electrical failure analysis data. The entire procedure takes less than two hours and works for both hard and soft defects as well as reliability failures. A case study is included in the paper to demonstrate the efficiency of the nondestructive technique.
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2021
ASM International
Issue Section:
Poster Session
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