This paper presents a number of case studies in which various methods and tools are used to localize resistive open defects, including two-terminal IV, two-terminal electron-beam absorbed current (EBAC), electron beam induced resistance change (EBIRCH), pulsed IV, capacitance-voltage (CV) measurements, and scanning capacitance microscopy (SCM). It also reviews the advantages and limitations of each technique.

capacitance-voltage electron beam induced resistance change, electron-beam absorbed current, nanoprobing, resistive open defects, scanning capacitance microscopy
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ASM International
Topics
Atomic force microscopy Semiconductor wafer fabrication Electrical resistance Test method evaluation
Issue Section:
Nanoprobing and Electrical Characterization
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