This paper describes an accurate and controllable delayering process to target defects in new materials and device structures. The workflow is a three-step process consisting of bulk device delayering by broad Ar ion beam milling, followed by plan view specimen preparation using a focused ion beam, then site-specific delayering via concentrated Ar ion beam milling. The end result is a precisely delayered device without sample preparation-induced artifacts suitable for identifying defects during physical failure analysis.
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Issue Section:FIB Sample Preparation