Accurate Sub-micron Device Delayering of Plan View TEM Specimens By Ar Ion Milling

This paper describes an accurate and controllable delayering process to target defects in new materials and device structures. The workflow is a three-step process consisting of bulk device delayering by broad Ar ion beam milling, followed by plan view specimen preparation using a focused ion beam, then site-specific delayering via concentrated Ar ion beam milling. The end result is a precisely delayered device without sample preparation-induced artifacts suitable for identifying defects during physical failure analysis.