Abstract
This paper describes an accurate and controllable delayering process to target defects in new materials and device structures. The workflow is a three-step process consisting of bulk device delayering by broad Ar ion beam milling, followed by plan view specimen preparation using a focused ion beam, then site-specific delayering via concentrated Ar ion beam milling. The end result is a precisely delayered device without sample preparation-induced artifacts suitable for identifying defects during physical failure analysis.
This content is only available as a PDF.
Copyright © 2021 ASM International. All rights reserved.
2021
ASM International
Issue Section:
FIB Sample Preparation
You do not currently have access to this content.