Passive voltage contrast (PVC) is widely used to detect underlying connectivity issues between metals based on the brightness of upper metals using scanning electron microscopy (SEM) or focused ion beam (FIB).  However, it cannot be applied in all cases due to the uniqueness of each case where brightness alone is insufficient to tell leakage location. In this study, propose a simple technique using platinum (Pt) marking as a circuit edit (CE) technique to alter metal PVC to identify the actual leakage location. Conventional SEM and PVC contrast imaging are unable to pinpoint exact defects without data confirming the leakage from nano-probing such as Atomic Force Probing (AFP) or SEM base nano-probing (NP) . Using this method, we can improve the analysis cycle time by direct analysts the defective location in SEM, while also saving tool cost.