The paper demonstrates accurate fault isolation information of metal-insulator-metal (MiM) capacitor failures by lock-in thermograph (LIT). In this study, a phase image spot location at a lock-in frequency larger than 5 Hz gives more accurate defect localization than an LIT amplitude image or OBIRCH to determine the next FA steps.

defect localization, failure analysis, fault isolation, lock-in thermography, metal-insulator-metal capacitor, optical beam induced resistance change
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2020
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Capacitors Semiconductor wafer fabrication Thermography
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