Abstract

Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After extensive detailed characterization, it was concluded that the N-type dopant signal was likely due to projections from the source/drain regions included in the TEM lamella. Datamining identified the scan chain fail to be occurring uniquely for a specific family of tools used during source/drain implant diffusion activation. This paper discusses the processes involved in yield delta datamining of FinFET and its advantages over failure characterization, fault localization, nanoprobing, and physical failure analysis.

This content is only available as a PDF.
You do not currently have access to this content.