This research summarizes a variety of physical failure modes of GaAs-based oxide-confined VCSELs and their root causes. Standard failure analysis procedure, which includes defect fault isolation by PEM or IR-OBIRCH and physical inspection by TEM analysis are also presented in detail.

fault isolation, gallium arsenide, optical beam induced resistance change, oxide-confined vertical-cavity surface-emitting lasers, photoemission electron microscopy, root cause analysis, transmission electron microscopy
This content is only available as a PDF.
Copyright © 2020 ASM International. All rights reserved.
2020
ASM International
Topics
Photoemission electron microscopy Transmission electron microscopy Semiconductor wafer fabrication Circuit components
Issue Section:
Poster Session
You do not currently have access to this content.