Abstract
Transmission electron microscopy (TEM) is a widely used technique in semiconductor device failure analysis. A common challenge in TEM is electron radiation damage, which can generate an uncertainty for correct analysis. This paper reports a study of the electron beam-radiation damages in small technology nodes semiconductor devices relating to the FINFET sidewall and metal layer. The study is performed at three different high tensions at 200kV, 60kV, and 30kV to compare the electron beam-radiation damages. The paper demonstrates that using lower high tension is preferred for minimizing the electron beam-radiation damage in advanced semiconductor devices. However, it also shows that the lowest high tension might not always be suitable for certain semiconductor device regions.
