Abstract

As dimension shrinkage, uncommon phenomena have been occurring during write and read operation in DRAM. These phenomena are strongly related cell capacitance, and the sensitivity of leakage current increases. Leakage current, especially in cell capacitor or cell transistor, is a major cause of the imbalance between stored charge in write operation and served charge in the read operation. Generally, error induced by leakage current appears data-1 failure, but in our study data-0 failure is observed in the case of extreme low cell capacitance that failure level is ppb (parts per billion). Results show that this phenomenon is influenced by cell capacitance, gate/body voltage of cell transistor, and supplied voltage level of the bitline sense amplifier. Based on various results, the electron loss to form inversion electron channel of cell transistor is regarded as a major factor like Charge Feedthrough [5].

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