An advanced technique for site-specific Atom Probe Tomography (APT) is presented. An APT sample is prepared from a targeted semiconductor device (commercially available product based on 14nm finFET technology). Using orthogonal views of the sample in STEM while FIB milling, a viable APT sample is created with the tip of the sample positioned over the lightly-doped drain (LDD) region of a pre-defined PFET. The resulting APT sample has optimal geometry and minimal amorphization damage.

atom probe tomography, fin field-effect transistor, focused ion beam milling, lightly-doped drain, sample preparation, scanning transmission electron microscopy, semiconductor devices
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2020
ASM International
Topics
Scanning transmission electron microscopy Atom probe tomography Semiconductor wafer fabrication Circuit components
Issue Section:
FIB Circuit Analysis and Edit
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