Abstract

This presentation demonstrates how Time-of-Flight Secondary Ion Mass Spectroscopy provides unique information to identify suspect counterfeit semiconductor devices. An example is shown where the epitaxial layers of a light emitting device (LED) do not match those of the exemplar.

Keywords: Secondary Ion Mass Spectroscopy, SIMS, counterfeit detection, LED, Light emitting diode.

This content is only available as a PDF.
You do not currently have access to this content.