Abstract

Demarest et al. concluded in their previous report that a ten times improvement in placement accuracy was required to enable automated transmission electron microscopy (TEM) sample preparation, and wafer alignment by GDS coordinates demonstrated a factor of two improvement in comparison to optical or scanning electron microscope based processes. This paper provides an additional update on this project. The study is about a GDS based process developed to simplify the complicated workflow for examining discrete electrical failures. The results of this study indicated that the recipe prototype developed on a test structure had a unique feature that consisted of an approximately 45nm by 200nm Cu line segment. Executing the prototype recipe on a wafer at the same process point fabricated 6 months after the original wafer yielded four identical successful samples of about 30nm sample thickness. This technique can thus be extended to large 2D arrays of small structures.

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