Abstract

This paper demonstrates a two-pin Electron Beam Induced Current (EBIC) isolation technique to isolate the defective Fin with gate oxide damage in advanced Fin Field Effect Transistor (FinFET) devices. The basic principle of this twopin configuration is similar to two-point Electron Beam Absorption Current (EBAC) technique: a second pin as ground on the gate is added to partially shunt the EBIC current and thus creates EBIC contrast from the defective Fin. In this way, the challenge of highly resistive short path inside the Fin in a narrow gate can be overcome. The paper will provide failure analysis details using this technique for defective Fin isolation.

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