This paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool and its application for the detection of delamination at the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample. In the current study this thinning step has been performed by the ion beam of a ToF-SIMS tool containing an in-situ AFM, which allows not only chemical analysis of the interface but also a well-controlled local thinning (size, depth and roughness).

chemical analysis, delamination defects, Gigahertz scanning acoustic microscopy, in-situ atomic force microscopy, time-of-flight secondary ion mass spectrometry, wafer level scanning tool
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2019
ASM International
Topics
Chemical analysis Atomic force microscopy Scanning acoustic microscopy Semiconductor wafer fabrication Time-of-flight secondary ion mass spectrometry
Issue Section:
3D Devices and Packages
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