Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Auger electron spectroscopy, focused ion beam, scanning electron microscopes, secondary electrons, semiconductor devices, voltage contrast
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Copyright © 2019 ASM International. All rights reserved.
2019
ASM International
Topics
Focused ion beam tomography Semiconductor wafer fabrication Auger electron spectroscopy Scanning electron microscopes
Issue Section:
Microscopy
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