Abstract

With the introduction of CNC-based milling systems, it became possible to more uniformly deconstruct silicon devices for through-silicon electrical fault isolation techniques that feature either a convex or concave geometry or by thermally relaxing the device. This paper presents a novel methodology for uniform mechanical deprocessing of stacked memory modules using a CNC milling system. The PCB (FR4) substrate has been identified as the primary mechanism influencing both the profile of the device and relaxation that occurs during device deconstruction. Examples showing this effect are provided on both pre- and post-processed devices where a difference in symmetry can be observed. Utilizing this new strategy, it is possible to restore a more symmetrical profile that is easier to process with a CNC milling machine.

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