Abstract

E-beam induced current technique is a fault isolation technique based on SEM-based nanoprobers. Electron beam induced current (EBIC) can help failure analysts quickly identify the defective device with abnormal junction behavior from a relatively large area of interest. Using EBIC, defects can be pin-pointed down to individual Fin, which significantly enhanced the success rate. In this paper, two cases are used as examples to illustrate how this failure analysis (FA) methodology provides a powerful and efficient solution in localizing defective fins. In the first case, a local full bit-line fail was submitted for failure analysis. In the second case, a MOS capacitor parametric test structure designed to monitor gate oxide break down voltage that showed early break down behavior during in-line test. Failure analysis was requested to investigate the root-cause.

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