Abstract
The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.
This content is only available as a PDF.
Copyright © 2018 ASM International. All rights reserved.
2018
ASM International
Issue Section:
Focused Ion Beam Analysis and Circuit Edit
You do not currently have access to this content.