Abstract

The ability to expose a huge kerf/PCM (Process Control Monitor) test structure at the same level is limited from top down finger polishing. Also, in Scanning Electron Microscopy (SEM) the electron beam (e-beam) shift for electron beam absorbed current (EBAC) analysis is not able to cover the whole structure. The recently implemented technique described herein combines the focus ion beam (FIB) chemical enhanced milling method with EBAC analysis to stop the polishing at the upper layer and split the EBAC analysis into portions from the test structure. These help to improve the area of interest (AOI) evenness and enable the extension of the EBAC analysis.

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