Abstract
The advent of lock-in thermal imaging application on semiconductor failure analysis added capability to localize failures through thermal activity (emission) of the die. When coupled with creative electrical set-up and material preparations, lock-in thermography (LIT) [1, 2] application gives more possibility in exploring the failure of the device using low power settings. This gives higher probability of preserving the defect which leads to a more conclusive root cause determination.
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2018
ASM International
Issue Section:
Failure Analysis Process
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