Conventional mechanical sample preparation is a difficult and uncontrolled process that does not allow targeting of a specific depth or layer. Because of the difficulties presented by mechanical sample preparation, there has been an emergence of beam-based techniques for device delayering applications. Cross-sectioning is another commonly used technique used in microelectronics industry investigations; when combined with delayering, one can gain complete knowledge about a device's faults. This paper presents a development in semiconductor device investigation using low energy, broad-beam argon ion milling. The results highlight that broad-beam Ar ion milling produces excellent surface quality, which allows high resolution scanning electron microscope observation and energy dispersive spectrometry analyses, even at low energy.

This content is only available as a PDF.
You do not currently have access to this content.