As the technology scales down, SEM (Scanning Electron Microscope) based nanoprobing faces challenges. Transistors are more susceptible to electron beam damage. As SEM energy decreases to prevent damage, imaging resolution degrades, making it increasingly more difficult to position the probe tips on the contacts. Once landed, the probe stability is important to maintain a good electrical connection throughout the measurement time. We review how well one of the latest generation nano probers addresses these challenges on sub 14nm transistors. Results are compared with a previous generation tool to illustrate the improved imaging and stability capabilities.