Abstract

In this paper, a sample was made on an advanced technology node finFET test structure and analyzed in a 200kV TEM equipped with a 4k camera and commercially available strain analysis software using a sub 5nm parallel probe. It was observed that doubling the step size of the data acquisition from 5nm per step to 2.5nm per step with a 4k image resolution changed the sensitivity of the data by about 4%. However, increasing the number of pixels of each diffraction pattern from 2k to 4k and removing the focused ion beam prepared sample surface damage both showed greater than 10% improvements in nano beam electron diffraction (NBD) sensitivity greater than 10%. As a result, it is possible to obtain greater sensitivity of the NBD technique by employing these changes in response to the evolving characterization needs.

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