Abstract

EBAC is a high-resolution, static technique that can be used for isolating electrical shorts, but it begins to fail for large, interconnected, test structures. In such cases, localization can be achieved when combined with optical localization techniques such as OBIRCH. This paper presents two case studies of subtle, FEOL shorts on a sub-14nm technology that required the resolution of EBAC.

14 nm process, electrical shorts, electron beam absorbed current, front end of line, optical beam induced resistance change
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2017
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
Low Power Devices
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