Abstract

The semiconductor industry is constantly investigating new methods that can improve both the quality of TEM lamella and the speed at which they can be created. To improve throughput, a combination of FIB-based preparation and ex situ lift-out (EXLO) techniques have been used. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we present low-energy (<1 keV), narrow-beam (<1 μm diameter), Ar+ ion milling as a method of preparing electron-transparent and gallium-free EXLO FIB specimens.

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