Abstract

Tremendous research efforts have been devoted particularly to the development and improvement of through silicon vias (TSV) in order to provide a key enabling technology for vertical system integration. To achieve high processing yield and reliability efficient failure analysis techniques for process control and root cause analysis are required. The current paper presents an advanced approach for non-destructive localization of TSV sidewall defects applying high resolution Lock-in Thermography and Photoemission Microscopy imaging and defocusing series.

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