Using a laser to purposely damage (or zap) a static random-access memory (SRAM) bitcell for bitmap validation purposes is a well-established technique. However, the absence of visible damage in FinFET SRAM cells, amongst other things, makes precision zapping in these devices more difficult. In this paper, we describe system enhancements and a modified workflow for bitmap validation of these devices using precision, near-infrared (NIR) laser-induced damage. We also explore the use of laser perturbation and non-precision zapping options. Examples are provided.