This paper presents a study about the invasiveness of 1340 nm continuous wave laser used for electrical failure analysis on 28 nm advanced technologies. It underlines the potential laser-induced degradation for deep submicron technologies that could jeopardize analysis results by modifying physical and chemical properties at substructure level. The impact of laser power on transistor morphology and electrical behavior is studied and the results of this study enable us to setup safe experimental conditions.

28 nm process, chemical properties, continuous wave lasers, failure analysis, laser-induced degradation, physical properties, transistors
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Copyright © 2016 ASM International. All rights reserved.
2016
ASM International
Topics
Semiconductor wafer fabrication Test method evaluation
Issue Section:
Failure Analysis Process
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