It is known by both the commercial and government suppliers, one of the best ways to guarantee the security and reliability of IC's is to image the IC directly using an x-ray microscope. These images can be inspected for many signs of counterfeit electronics. Unfortunately, previous generations of x-ray imaging systems have not kept up with the increasingly sophisticated counterfeiting techniques. Traditional 2D X-ray inspection techniques are becoming inadequate for imaging and verifying features due to the limited resolution of these systems for thick samples and because 2D images contain too many overlapping features to easily discern, making identification very difficult. This paper discusses the development of advanced sample preparation techniques for counterfeit IC detection. It presents information on the limitations of X-ray imaging and 3D tomographic reconstruction, and on the models for resolution configuration improvement.