Abstract

Through custom test pattern generation and SRAM design analysis, we present the first demonstration of Laser Voltage Imaging (LVI) and Probing (LVP) for the successful fault isolation and physical analysis of DQ failures within a 14nm SRAM macro. These findings revealed the fail site to reside within the I/O circuitry of the associated failing pin, a previously overlooked location as common block failures are typically associated with physical anomalies within the SRAM periphery.

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