This paper explains how SEM two-point specimen current localization combined with TEM imaging/elemental mapping overcomes the limitations of conventional SEM and gallium ion beam FIB voltage contrast methods, pinpointing the location of nonlinear defects in advanced technology (<14nm) nodes.

14 nm back end of line, copper, delayering, focused ion beam, metallization, nanoprobing, root cause analysis, scanning electron microscope, transmission electron microscopy
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Copyright © 2016 ASM International. All rights reserved.
2016
ASM International
Topics
Scanning electron microscopy Transmission electron microscopy Semiconductor wafer fabrication Root cause analysis
Issue Section:
Failure Analysis Process
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