Abstract
In this paper, the development of advanced emission data analysis methodologies for IC debugging and characterization is discussed. Techniques for automated layout to emission registration and data segmentations are proposed and demonstrated using both 22 nm and 14 nm SOI test chips. In particular, gate level registration accuracy is leveraged to compare the emission of different types of gates and quickly create variability maps automatically.
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Copyright © 2016 ASM International. All rights reserved.
2016
ASM International
Issue Section:
Test, Diagnostics, and Yield Enhancement
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