Elemental Characterization of Sub 20 nm Structures in Devices Using Low Energy SEM-EDS

Here we investigate a new energy dispersive X-ray detector, which for the first time is optimized to work at the conditions typically used for high resolution imaging in a scanning electron microscope (SEM). To achieve this, significant developments have been made with regard to detector geometry and electronics. Using this new detector we are able to analyze structures in bulk semiconductor devices as well as thin sections at sub 20nm length scales in SEM. Here we outline the conditions required to carry out this analysis. Based on these results we propose workflows to accelerate failure analysis by obtaining the analysis result directly in the SEM without the need for analysis using transmission electron microscopy (TEM).