Abstract

We describe here the first demonstration of 14nm silicon device characterization using 1.55-2µm emission microscopy as a technique to interrogate the radiative properties of various physical defects. A study is presented and discussed for cases highlighting photo-emission only, hybrid photo-thermal-emission, and thermal-emission only.

14 nm process, emission microscopy, failure analysis, integrated circuits, semiconductor devices, silicon
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Copyright © 2016 ASM International. All rights reserved.
2016
ASM International
Topics
Microscopy Semiconductor wafer fabrication Silicon
Issue Section:
Failure Analysis Process
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