Abstract

We present experimental results of IC package decapsulation carried out using Ar and O2 gas mixture remote plasma generated by atmospheric microwave plasma needle (“a-MPN”). Depth etch rate of up to 6.5 µm/min and volume etch rate of up to 0.1 mm3/min were shown to be obtained by a-MPN process operated at 15 W microwave power. SEM imaging suggested no damage to the bonding wire, pads, or passivation.

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