Decapsulation of IC Package by Atmospheric Microwave Plasma Needle

We present experimental results of IC package decapsulation carried out using Ar and O2 gas mixture remote plasma generated by atmospheric microwave plasma needle (“a-MPN”). Depth etch rate of up to 6.5 µm/min and volume etch rate of up to 0.1 mm3/min were shown to be obtained by a-MPN process operated at 15 W microwave power. SEM imaging suggested no damage to the bonding wire, pads, or passivation.