Abstract

The visible approach of optical Contactless Fault Isolation (VIS-CFI) serves the perspective of application in FinFET technologies of 10 nm nodes and smaller. A solid immersion lens (SIL) is mandatory to obtain a proper resolution. A VISCFI setup with SIL requires a global polishing process for sub-10 µm silicon thickness. This work is the first to combine all these necessary components for high resolution VIS-CFI in one successful experiment. We demonstrate Laser Voltage Imaging and Probing (LVI, LVP) on 16/14 nm technology devices and investigate a focus depth dependence of the LVI/LVP measurement in FinFETs.

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