Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

capacitance-voltage spectroscopy, CMOS image sensor, dopant profiling, electrical scanning probe microscopy, failure analysis, scanning microwave impedance microscopy, semiconductor devices
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Copyright © 2015 ASM International. All rights reserved.
2015
ASM International
Topics
Scanning probe microscopy Semiconductor wafer fabrication Spectroscopy
Issue Section:
Scanning Probe Analysis
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