FA cannot consist of simply jumping to conclusions. The FA process is validated through correlation with the initial failure and through interpretation of the obtained results, subjective by definition. This paper illustrates the difficulty of analyzing complex failures caused by multiple factors, including wafer fabrication, assembly, and application conditions. Inter-Layer Dielectric (ILD) delamination was experienced on various ICs from the same 250nm technology. A complete set of techniques (C-SAM, laser and optical microscopy, SEM, FIB cross-sections, TEM, EFTEM, SIMS, Auger, delineation) was used as different pieces of the same puzzle to reveal the multiple factors contributing to the ILD delamination failures. Due to the subtle nature of some of the underlying causes, defining an accurate FA approach with appropriate sample preparation and accurate device traceability was critical to understanding this complex, multivariate issue.

C-mode scanning acoustic microscopy, delamination, focused ion beam, optical microscopy, root cause analysis, scanning electron microscopes, secondary ion mass spectrometry, semiconductor devices, transmission electron microscopy, wafer fabrication
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Copyright © 2015 ASM International. All rights reserved.
2015
ASM International
Topics
Scanning electron microscopy Transmission electron microscopy C-mode scanning acoustic microscopy Semiconductor wafer fabrication Root cause analysis Secondary ion mass spectrometry
Issue Section:
Failure Analysis Process
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