Multiple emission microscopy can be used to obtain a comprehensive overview of device emission during IDDQ-test. In this new approach an emission microscopy image is taken for each pattern of the IDDQ-test. Then the extensive amount of images is analyzed for correlation with IDDQ current levels. As a result, for each increased current level concurrent spots can be identified and further analyzed.

emission microscopy, failure analysis, Iddq testing, semiconductor devices
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Copyright © 2015 ASM International. All rights reserved.
2015
ASM International
Topics
Microscopy Semiconductor wafer fabrication
Issue Section:
Product Yield, Test, and Diagnostics
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