Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

failure analysis, power MOSFETs, silicon carbides, super-higher-order scanning nonlinear dielectric microscopy
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Copyright © 2015 ASM International. All rights reserved.
2015
ASM International
Topics
Power semiconductor devices Microscopy Semiconductor wafer fabrication
Issue Section:
Poster Session
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