Voltage contrast (VC) is a useful technique and used widely in failure analysis of integrated circuit (ICs). This paper will demonstrate different FIB current intensities in a specific VC case and, by means of the technique, locate possible defect sites quickly. With the help of conductive atomic force microscopy (C-AFM), we can get an electrical verification at the same time. We discuss the relationship of VC and C-AFM as well as what the root cause of failure is in this case.

conductive atomic force microscopy, current intensity, electrical verification, focused ion beam, integrated circuits, root cause analysis, voltage contrast
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Copyright © 2015 ASM International. All rights reserved.
2015
ASM International
Topics
Atomic force microscopy Semiconductor wafer fabrication Root cause analysis
Issue Section:
Poster Session
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