Abstract

A field failing Ondax’s 405nm Laser Diode (LD) was under failure analysis. The failure analysis (FA) results showed that the LD was very sensitive to ESD and the degradation was ESD induced. Some mechanism explanation is also given in this paper.

electrostatic discharge degradation, failure analysis, laser diodes
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2015
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
Poster Session
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