Novel NIR Camera with Extended Sensitivity and Low Noise for Photon Emission Microscopy of VLSI Circuits

This work presents a new photon emission microscopy camera prototype for the acquisition of intrinsic light emitted from VLSI circuits during their normal operation. This novel camera was designed to be sensitive to longer wavelengths in order to maximize the signal intensities from modern VLSI chips which are characterized by a red shift in the intrinsic emission spectrum. In this paper, we will characterize the performance of the camera using 32 nm and 22 nm SOI chips. The novel camera is able to collect emission images with the circuit under test operating at a supply voltage down to 0.5 V, exceeding the performance of a state-of-the-art InGaAs camera.