This paper reports a novel method for site specific plan view transmission electron microscopy (TEM) sample preparation. The detailed procedure is introduced step by step. To demonstrate the practicality of this technique in failure analysis, case studies on 45nm and below technology nodes using the novel method are reported. The results showed that the method is very useful for the analysis of the specified failure location and is helpful to improve the success rate of failure analysis.

45 nm process, failure analysis, sample preparation, transmission electron microscopy
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Copyright © 2014 ASM International. All rights reserved.
2014
ASM International
Topics
Specimen preparation Transmission electron microscopy Semiconductor wafer fabrication
Issue Section:
Sample Preparation and Deprocessing
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