Good control over beam and chemistry conditions are required to enable uniform delayering of advanced process technologies in the FIB. The introduction of newer, thinner and more beam sensitive materials have made delayering more complicated. We shall introduce a new chemistry for device delayering and present results from both Ga and Xe ion beams showing its improvement over existing chemistries.

delayering, failure analysis, focused ion beam, microelectronic devices
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Copyright © 2014 ASM International. All rights reserved.
2014
ASM International
Topics
Specimen preparation Semiconductor wafer fabrication
Issue Section:
Sample Preparation and Deprocessing
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