Abstract

This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions inside an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed laser on a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals possible bipolar transistor activation at high laser power. This activation threshold revealed its dependence on laser power and wells biasing. Based on the measurements made during our experiments, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation.

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