Abstract

In this work, energy-filtered TEM nano-beam diffraction (NBD) technique was used to evaluate channel strain profile in pMOS transistors suffering low Idsat issue. TEM and EDX analysis showed nickel deep diffusion into embedded SiGe source/drain. Such defect not only led to leakage current from S/D to substrate but might also reduce compressive strain induced to channel by eSiGe. Comparison of channeldirection strain between bad and good samples using NBD confirmed strain relaxation in bad sample which explained low Idsat as a result of reduced holes mobility.

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