This study investigated the origin of detrimental high ohmic behavior of contacts by means of analytical electron microscopy. The root cause for the high resistivity could be identified as delamination of the contact bottom in the nanometer range. Based on the results, we were able to establish a method to identify thin oxide layers using analytical methods without being able to spatially resolve them in a combined focused ion beam instrument and scanning electron microscope.

analytical electron microscopy, delamination, focused ion beam, lamella oxidation, ohmic contacts, root cause analysis, scanning electron microscope, transmission electron microscopy
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Copyright © 2014 ASM International. All rights reserved.
2014
ASM International
Topics
Analytical electron microscopy Semiconductor wafer fabrication Root cause analysis
Issue Section:
Microscopy
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