We have exploited an innovative X-ray tomography system, which is hosted in a Scanning Electron Microscope (SEM). The resolution reached by this equipment is closed to 160nm in 2 dimensions. We imaged Through Silicon Vias (TSV) which have undergone a manufacturing defect and characterized voids within these interconnections.

scanning electron microscope, through silicon vias, voids , X-ray tomography
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Copyright © 2013 ASM International. All rights reserved.
2013
ASM International
Topics
Scanning electron microscopy X-ray microtomography Semiconductor wafer fabrication
Issue Section:
Package Level Failure Analysis
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