Abstract
This paper describes a sample preparation methodology for Trench Power MOSFET that significantly improved our failure analysis success rate for trench bottom defect. With precise fault localization and subsequent a unique physical failure analysis using parallel polishing method on Trench Power MOSFET, This enabled defect detection from the trench top to the trench bottom.
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Copyright © 2013 ASM International. All rights reserved.
2013
ASM International
Issue Section:
Sample Preparation
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